MRF7S21080HSR5【PDF 1/15 页】MOSFET RF N-CH 22W NI-780S

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MRF7S21080HR3 MRF7S21080HSR3

RF Device Data

Freescale Semiconductor

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

Designed for CDMA base station applications with frequencies from 2110 to

2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be

used in Class AB and Class C for TD--SCDMA and PCN--PCS/cellular radio

applications.

Typical Single--Carrier W--CDMA Performance: VDD

=28Volts,IDQ

800 mA, Pout

= 22 Watts Avg., f = 2167.5 MHz, IQ Magnitude Clipping,

Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01%

Probability on CCDF.

Power Gain ? 18 dB

Drain Efficiency ? 32%

Device Output Signal PAR ? 6.5 dB @ 0.01% Probability on CCDF

ACPR @ 5 MHz Offset ? --38 dBc in 3.84 MHz Channel Bandwidth

Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 80 Watts CW

Peak Tuned Output Power

Pout

@ 1 dB Compression Point

80 Watts CW

Features

100% PAR Tested for Guaranteed Output Power Capability

Characterized with Series Equivalent Large--Signal Impedance Parameters

Internally Matched for Ease of Use

Integrated ESD Protection

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

Designed for Digital Predistortion Error Correction Systems

RoHS Compliant

In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

Rating

Symbol

Value

Unit

Drain--Source Voltage

VDSS

--0.5, +65

Vdc

Gate--Source Voltage

VGS

--6.0, +10

Vdc

Operating Voltage

VDD

32, +0

Vdc

Storage Temperature Range

Tstg

-- 65 to +150

°C

Case Operating Temperature

150

°C

Operating Junction Temperature

(1,2)

225

°C

Table 2. Thermal Characteristics

Characteristic

Symbol

Value

(2,3)

Unit

Thermal Resistance, Junction to Case

Case Temperature 79°C, 79 W CW

Case Temperature 75°C, 22 W CW

RθJC

0.60

0.65

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

Document Number: MRF7S21080H

Rev. 1, 3/2011

Freescale Semiconductor

Technical Data

MRF7S21080HR3

MRF7S21080HSR3

2110--2170 MHz, 22 W AVG., 28 V

SINGLE W--CDMA

LATERAL N--CHANNEL

RF POWER MOSFETs

CASE 465--06, STYLE 1

NI--780

MRF7S21080HR3

CASE 465A--06, STYLE 1

NI--780S

MRF7S21080HSR3

Freescale Semiconductor, Inc., 2007, 2011.

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